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STTH12002TV Datasheet HIGH EFFICIENCY ULTRAFAST DIODE

Manufacturer: STMicroelectronics

Overview: ® STTH12002TV HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (typ) trr.

General Description

Dual center tap rectifier suited for welding equipment and high power industrial application.

Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters.

ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ =0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 105°C Per diode Per diode Value 200 100 60 700 - 55 + 150 150 Unit V A A A °C °C tp = 10 ms Sinusoidal per diode February 2004 - Ed: 1 1/5 Free Datasheet http://www.datasheet4u.com/ STTH12002TV THERMAL PARAMETERS Symbol Rth (j-c) Junction to case Parameter Per diode Per device Rth (j-c) Coupling Maximum 0.76 0.43 0.1 °C/W Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 25°C Tj = 150°C Tj = 150°C Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% Min.

Key Features

  • 2 x 60 A 200 V 150 °C 0.73 V 35 ns A1 A2 K1 K2 K1 A1 K2 A2.
  • Suited for welding and high power equipment Very low forward losses Low recovery times High surge current capability Insulated: Insulating voltage = 2500 VRMS Capacitance < 45 pF Low leakage current ISOTOP STTH12002TV1.

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