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STTH16R04C - Ultrafast recovery diode

Datasheet Summary

Description

The STTH16R04C series uses ST's new 400 V planar Pt doping technology.

The STTH16R04C is specially suited for switching mode base drive and transistor circuits.

Features

  • Very low switching losses.
  • High frequency and/or high pulsed current operation.
  • High junction temperature.
  • Insulated package:.
  • TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF.

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Datasheet Details

Part number STTH16R04C
Manufacturer STMicroelectronics
File Size 126.79 KB
Description Ultrafast recovery diode
Datasheet download datasheet STTH16R04C Datasheet
Additional preview pages of the STTH16R04C datasheet.

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Full PDF Text Transcription

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STTH16R04C Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2X8A 400 V 175° C 0.9 V 25 ns Features and benefits ■ Very low switching losses ■ High frequency and/or high pulsed current operation ■ High junction temperature ■ Insulated package: – TO-220FPAB Electrical insulation = 1500 VRMS Capacitance = 12 pF Description The STTH16R04C series uses ST's new 400 V planar Pt doping technology. The STTH16R04C is specially suited for switching mode base drive and transistor circuits. Packaged in through-the-hole and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.
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