STTH1R02 Datasheet | STMicroelectronics

Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1.5 A 200 V 175° C 0.7 V 15 ns Features and benefits - Very low conduction losses - Negligible switching losses - Low forward and reverse recovery times - High junction temperature Description The STTH1R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DO-41, DO-15, SMA, and SMB, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. K DO-41 STTH1R02 A K DO-15 STTH1R02Q SMA STTH1R02A SMB STTH1R02U Order codes Part Number STTH1R02 STTH1R02RL STTH1R02A STTH1R02Q STTH1R02QRL STTH1R02U Marking STTH1R02 STTH1R02 R1A STTH1R02Q STTH1R02Q 1R2S March 2007 Rev 3 .st. 1/10 Characteristics 1 Characteristics Table 1. Symbol Absolute ratings (limiting values at Tj = 25° C, unless otherwise...