STMicroelectronics STTH75S12
The STTH75S12 is developed using ST’s Turbo 2 1200 V technology. It is well-suited as a boost diode, especially for use in UPS.| Part No. | STTH75S12 |
|---|---|
| Datasheet | STTH75S12 Download |
| Manufacturer |  STMicroelectronics |
| Description | Turbo 2 ultrafast high voltage rectifier |
| Buy | Stock & Price |
FEATURES
● Ultrafast switching● Low reverse current
● Low thermal resistance
● Reduces switching and conduction losses Datasheet − production data
DESCRIPTION
Table 1. Device summary Symbol Value IF(AV) VRRM trr (typ) VF (typ) Tj (max) 75 A 1200 V 40 ns 1.9 V 175 °C September 2014 This is information on a product in full production. DocID026666 Rev 1 1/8 8 Characteristics 1 Characteristics STTH75S12 Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current, δ = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 80 °C tp = 10 ms sinusoidal 1200 106 75 370 -65 to +175 175 V A A A °C °C Symbol Rth(j-c) Junction to case Table 3. Thermal parameters Parameter Value 0.35 Unit °C/W Symbol Table 4. Static electrical characteristics Parameter Test conditions Min. IR(1) Reverse leakage current VF(2) Forward voltage drop 1.
