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STTH802-Y - Automotive ultrafast recovery diode

General Description

The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application.

Key Features

  • Very low conduction losses.
  • Negligible switching losses.
  • Low forward and reverse recovery time.
  • High junction temperature.
  • AEC-Q101 qualified.

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STTH802-Y Automotive ultrafast recovery diode Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time ■ High junction temperature ■ AEC-Q101 qualified Description The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application. Datasheet  production data A K K A NC DPAK STTH802BY-TR Table 1. Device summary IF(AV) VRRM Tj (max) VF (typ) trr (typ) 8A 200 V 175 °C 0.8 V 17 ns October 2012 This is information on a product in full production. Doc ID 018563 Rev 2 1/7 www.st.