STMicroelectronics STTH802-Y
The STTH802-Y uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.| Part No. | STTH802-Y |
|---|---|
| Datasheet | STTH802-Y Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive ultrafast recovery diode |
| Buy | Stock & Price |
FEATURES
● Very low conduction losses● Negligible switching losses
● Low forward and reverse recovery time
● High junction temperature
● AEC-Q101 qualified
DESCRIPTION
Packaged in DPAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for automotive application. Datasheet production data A K K A NC DPAK STTH802BY-TR Table 1. Device summary IF(AV) VRRM Tj (max) VF (typ) trr (typ) 8A 200 V 175 °C 0.8 V 17 ns October 2012 This is information on a product in full production. Doc ID 018563 Rev 2 1/7 7 Characteristics 1 Characteristics STTH802-Y Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) Average forward current, = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Operating junction temperature range Tc = 145 °C tp = 10 ms sinusoidal 200 V 16 A 8 A 100 A -65 to + 175 °C -40 to + 175 °C Table 3.
