FEATURES AND BENEFITS
s 8A 300 V 4A 175 °C 1.3 V 30 ns K A TO-220AC STTH8R03D s s Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION
NC A D2PAK STTH8R03G ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 140°C δ = 0.5 tp = 10 ms sinusoidal Value 300 20 8 80 - 65 + 175 + 175 Unit V A A A °C °C February 2001 - Ed: 1H 1/6 STTH8R03G/D THERMAL AND POWER DATA Symbol Rth (j-c) Junction to case Parameter Value 2.5 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS
Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.9 x IF(AV) + 0.05 IF2(RMS) 1.05 15 Min.
STMicroelectronics
