STMicroelectronics STTH8S06
STTH8S06 is a state of the art ultrafast recovery diode. By the use of 600 V Pt doping planar technology, this diode will out-perform the power factor corrections circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH8S06, reduces significantly the switching power losses of the MOSFET and thus increases the efficiency of the application.| Part No. | STTH8S06 |
|---|---|
| Datasheet | STTH8S06 Download |
| Manufacturer |  STMicroelectronics |
| Description | Ultrafast Rectifiers |
| Buy | Stock & Price |
FEATURES
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● A Ultrafast recovery Low reverse recovery current Reduces losses in diode and switching transistor Low thermal resistance Higher frequency operation Insulated TO-220FPAC version – Insulation voltage = 1500 V rms – Package capacitance = 12 pF K A K A K TO-220AC STTH8S06D TO-220FPAC STTH8S06FP
DESCRIPTION
ST's This leads designers to reduce the size of their heatsinks. This device is also intended for applications in power supplies and power conversions systems, motor drive, and other power switching applications. Table 1. Device summary IF(AV) VRRM IRM(typ.) Tj (max) VF (typ) trr (typ) 8A 600 V 4.4 A 175 °C 1.5 V 12 ns December 2007 Rev 1 1/8 8 Characteristics STTH8S06 1 Table 2. Symbol VRRM IF(AV) IFSM Tstg Tj Characteristics Absolute ratings (limiting values) Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms Value 600 8 60 -65 to + 175 175 Unit V A A °C °C Table 3.
