STTH9012TV Datasheet | STMicroelectronics

Ultrafast recovery - 1200 V diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 45 A 1200 V 150° C 1.20 V 50 ns K1 A1 K2 A1 K2 A2 A2 K1 STTH9012TV1 A1 K1 A2 K2 STTH9012TV2 A1 K2 K1 A2 Features and benefits - - - - - - Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500 VRMS Capacitance = 45 p F ISOTOP Order codes Part Number STTH9012TV1 STTH9012TV2 Marking STTH9012TV1 STTH9012TV2 Description The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate petitive advantage for this device. March 2006 Rev 1 .st. 1/8 Characteristics Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tc = 75° C per diode tp = 5 µs, F = 5 k Hz square tp = 10 ms Sinusoidal Value 1200 150 45 600 420 -65 to + 150 150 Unit V A A A A °C °C Table...