STMicroelectronics STU105N3LLH7
The resulting Power d MOSFET exhibits the lowest RDS(on) in all ro packages.| Part No. | STU105N3LLH7 |
|---|---|
| Datasheet | STU105N3LLH7 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 30V 80A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Type VDSS RDS(on) max ID 3 STD105N3LLH7 ) STP105N3LLH7 t(s STU105N3LLH7 30 V 30 V 30 V 0.0032 Ω 0.0035 Ω 0.0035 Ω 80 A 80 A 80 A uc● RDS(on) * Qg industry benchmark rod
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness P
● Low gate drive power losses olete
APPLICATIONS
bs● Switching applications - O
DESCRIPTION
t(s) These devices utilize the 7th generation of design c rules of ST’s proprietary STripFET™ technology, u with a new gate structure. 1 DPAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Obsolete P S(3) AM01474v1 Table 1. Device summary Order codes STD105N3LLH7 STP105N3LLH7 STU105N3LLH7 Marking 105N3LLH7 105N3LLH7 105N3LLH7 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube October 2012 Doc ID 023729 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/17 17 Contents Contents STD105N3LLH7, STP105N3LLH7, STU105N3LLH7 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
