STMicroelectronics STU10NC70ZI
N-Channel MOSFET
| Part No. | STU10NC70ZI |
|---|---|
| Datasheet | STU10NC70ZI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT sABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C w Drain Current (continuos) at TC = 100° C Total Dissipation at TC = 25°C Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature Drain Current (pulsed) w w t a .D Parameter S a e h U 4 t e STU10NC70Z .
