STMicroelectronics STU10NM65N
This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.| Part No. | STU10NM65N |
|---|---|
| Datasheet | STU10NM65N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed●
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● 3 1 3 1 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. TO-220FP DPAK Application
● Internal schematic diagram Switching applications
DESCRIPTION
It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 10NM65N 10NM65N 10NM65N 10NM65N Package DPAK TO-220FP TO-220 IPAK Packaging Tape & reel Tube Tube Tube Order codes STD10NM65N STF10NM65N STP10NM65N STU10NM65N February 2008 Rev 2 1/17 17 Contents STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
