STMicroelectronics STU11N65M5
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.| Part No. | STU11N65M5 |
|---|---|
| Datasheet | STU11N65M5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 VDSS @ RDS(on) TJmax max ID 710 V < 0.48 Ω 9 A● Worldwide best RDS(on) * area
● Higher VDSS rating and high dv/dt capability
● Excellent switching performance
● 100% avalanche tested
APPLICATIONS
● Switching applications TAB TAB 2 3 1 D2PAK 23 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 IPAK Figure 1. Internal schematic diagram $ 4!"DESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. Table 1. Device summary Order codes STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 Marking 11N65M5 ' 3 !- V Package D2PAK DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube December 2012 This is information on a product in full production. Doc ID 022864 Rev 2 1/25 25 Contents Contents STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
