STU11NC60 Datasheet PDF | STMicroelectronics

STMicroelectronics STU11NC60

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Part No.	STU11NC60
Datasheet	STU11NC60 Download
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
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DESCRIPTION

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 11 8 44 160 1.28 4.5 –65 to 150 150 (1)ISD ≤11A, di/dt ≤100A/µ s, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/ °C V/ns °C °C (●)Pulse width limited by safe operating area June 2000 1/8 STU11NC60 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Te...