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STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND
650 V
< 0.45 Ω
10 A 10 A(1) 10 A 10 A 10 A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology.