Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology.
Features
- Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND
650 V
< 0.45 Ω
10 A 10 A(1) 10 A 10 A 10 A
1. Limited only by maximum temperature allowed.
- The worldwide best RDS(on).
- area amongst the fast recovery diode devices.
- 100% avalanche tested.
- Low input capacitance and gate charge.
- Low gate input resistance.
- Extremely high dv/dt and avalanche capabilities.
STU11NM60ND Datasheet
