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STU16NC50 Datasheet PDF

STMicroelectronics STU16NC50

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. STU16NC50
Datasheet STU16NC50 Download
Manufacturer
STMicroelectronics
Description N-channel Power MOSFET
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STU16NC50 datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 16 10 64 160 1.28 3 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C (●)Pulse width limited by safe operating area October 2001 1/8 STU16NC50 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 3...
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