STMicroelectronics STU27N3LH5
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).| Part No. | STU27N3LH5 |
|---|---|
| Datasheet | STU27N3LH5 Download |
| Manufacturer |  STMicroelectronics |
| Description | 30V 24A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type VDSS RDS(on) max STD27N3LH5 30 V 0.019 Ω STP27N3LH5 30 V 0.020 Ω STU27N3LH5 30 V 0.020 Ω● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● Very low switching gate charge
● High avalanche ruggedness
● Low gate drive power losses ID 27 A 27 A 27 A Application
● Switching applications
DESCRIPTION
IPAK 3 2 1 3 1 DPAK TO-220 3 2 1 Figure 1. Internal schematic diagram D (TAB or 2) G (1) Table 1. Device summary Order codes STD27N3LH5 STU27N3LH5 STP27N3LH5 Marking 27N3LH5 27N3LH5 27N3LH5 S (3) sc08440 Package DPAK IPAK TO-220 Packaging Tape and reel Tube Tube March 2011 Doc ID 15617 Rev 3 1/21 21 Contents Contents STD27N3LH5, STP27N3LH5, STU27N3LH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
