STMicroelectronics STU2N80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 AM01476v1_tab technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STU2N80K5 |
|---|---|
| Datasheet | STU2N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 2A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STU2N80K5 800 V 4.5 Ω 2A 3 2 1● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit) IPAK
● Ultra-low gate charge
● 100% avalanche tested D(2, TAB)
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Product status link STU2N80K5 Product summary Order code STU2N80K5 Marking 2N80K5 Package IPAK Packing Tube DS9820 - Rev 4 - November 2023 For further information contact your local STMicroelectronics sales office. STU2N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 2 A, di/dt = 100 A/μs, VDS (peak) < V(BR)DSS.
