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STU2NK100Z - N-channel Power MOSFET

General Description

AM01476v1_tab established PowerMESH.

Key Features

  • TAB 3 2 1 IPAK D(2, TAB) Order code VDS STU2NK100Z 1000 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STU2NK100Z Datasheet N-channel 1000 V, 6.25 Ω typ., 1.85 A SuperMESH Power MOSFET in an IPAK package Features TAB 3 2 1 IPAK D(2, TAB) Order code VDS STU2NK100Z 1000 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 8.5 Ω ID 1.85 A • Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.