STMicroelectronics STU3N45K3
N-CHANNEL POWER MOSFET
FEATURES
TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Order code STU3N45K3 VDSS 450 V RDS(on) max <4Ω ID Pw 1.8 A 27 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener protected
APPLICATIONS
● Switching applicationsDESCRIPTION
This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. Order code STU3N45K3 Table 1.Device summary Marking Package 3N45K3 IPAK June 2013 This is information