STMicroelectronics STU40N2LH5
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.| Part No. | STU40N2LH5 |
|---|---|
| Datasheet | STU40N2LH5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD40N2LH5 STU40N2LH5●
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● VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK Application
● Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking 40N2LH5 40N2LH5 Package DPAK IPAK Packaging Tape and reel Tube Order codes STD40N2LH5 STU40N2LH5 September 2008 Rev 2 1/12 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STD40N2LH5 - STU40N2LH5 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) PTOT Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-Source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating fa...
