STMicroelectronics STU4N52K3
This is information on a product in full production.FEATURES
Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected Application
● Switching applications
DESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 IPAK Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 Marking 4N52K3 4N52K3 4N52K3 4N52K3 Package DPAK TO-220FP TO-220 IPAK Packa...