STMicroelectronics STU4N62K3
The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.| Part No. | STU4N62K3 |
|---|---|
| Datasheet | STU4N62K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | SuperMESH3 Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD4N62K3 STU4N62K3●
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● VDSS 620 V RDS(on) max < 1.95 Ω ID 3.8 A Pw 70 W 3 1 2 1 3 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected DPAK IPAK Figure 1. Internal schematic diagram D(2) Application
● Switching applications
DESCRIPTION
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. Table 1. Device summary Marking 4N62K3 G(1) S(3) AM01476v1 Order codes STD4N62K3 STU4N62K3 Package DPAK IPAK Packaging Tape and reel Tube May 2010 Doc ID 17549 Rev 1 1/12 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD4N62K3, STU4N62K3 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
