STMicroelectronics STU60N3LH5
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.| Part No. | STU60N3LH5 |
|---|---|
| Datasheet | STU60N3LH5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● Very low switching gate charge
● High avalanche ruggedness
● Low gate drive power losses Application
● Switching applications
DESCRIPTION
3 2 1 TO-220 3 1 DPAK 3 2 1 IPAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD60N3LH5 STP60N3LH5 STU60N3LH5 Marking 60N3LH5 60N3LH5 60N3LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube April 2009 Doc ID 14079 Rev 3 1/16 16 Contents Contents STD60N3LH5, STP60N3LH5, STU60N3LH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
