STMicroelectronics STU6N62K3
N-channel Power MOSFET
FEATURES
TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applications 3 2 1 TO-220FP TAB 3 2 1 TO-220 123 I²PAK 1 23 I²PAK FP TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2,TAB)DESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalan