STMicroelectronics STU6N65K3
N-channel Power MOSFET
| Part No. | STU6N65K3 |
|---|---|
| Datasheet | STU6N65K3 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W● 100% avalanche tested
● Extremely high dv/dt capability
● Gate charge minimized
● Very low intrinsic capacitance
● Improved diode reverse recovery characteristics
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. TAB 3 2 1 TO-220FP 1 2 3 I²PAKFP IPAK 3 2 1 Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device s
