STMicroelectronics STU6N90K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STU6N90K5 |
|---|---|
| Datasheet | STU6N90K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel 900V 6A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STU6N90K5 VDS 900 V RDS(on) max. ID 1.10 Ω 6A● Industry’s lowest RDS(on) x area
● Industry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STU6N90K5 Table 1: Device summary Marking Package 6N90K5 IPAK Packing Tube November 2016 DocID029950 Rev 1 This is information on a product in full production. 1/12 Contents Contents STU6N90K5 1 Electrical ratings............................................................................... 3 2 Electrical characteristics ................................................................. 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ...................................................................................... 8 4 Package information ........................................................................ 9 4.1 IPAK (TO-251) type C package information ......................................
