STU6NA90 Datasheet | STMicroelectronics

- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 .. s TYPICAL s s s s s s V DSS 900 V R DS(on) <2Ω ID 5.8 A RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to acodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce ponent count in multiple paralleled TO-220 designs and...