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STD6NF10 STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET
Features
Type STD6NF10 STU6NF10
VDSS 100 V 100 V
RDS(on) max < 0.250 Ω < 0.250 Ω
■ Exceptional dv/dt capability ■ 100% avalanche tested
ID 6A 6A
Application
■ Switching applications
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
3 2 1
IPAK
3 1
DPAK
Figure 1. Internal schematic diagram
Table 1.