STU70R1K3S Description
This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. STU70R1K3S Electrical ratings 1 Electrical ratings Table.
STU70R1K3S Key Features
- Reduced switching losses
- Lower RDS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected