STMicroelectronics STU75N3LLH6-S
This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.FEATURES
Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS 30 V RDS(on) max < 0.0055 Ω ID 75 A < 0.0059 Ω● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness
● Low gate drive power losses Application Switching applications
DESCRIPTION
TAB IPAK 3 2 1 TAB 3 2 1 Short IPAK TAB 3 1 DPAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S Marking 75N3LLH6 S(3) AM01474v1 Package DPAK TO-220 IPAK Short IPAK Packaging Tape and reel Tube July 2011 Doc ID 15978 Rev 4 1/21 21 Free Datasheet Contents Contents STD/P/U75N3LLH6, STU75N3LLH6-S 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . .