STMicroelectronics STU7LN80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.FEATURES
Order code STU7LN80K5 VDS 800 V RDS(on) max. 1.15 Ω ID 5A● Industry’s lowest RDS(on) x area
● Industry’s best figure of merit (FoM)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STU7LN80K5 Table 1: Device summary Marking Package 7LN80K5 IPAK Packing Tube January 2016 DocID028830 Rev 1 This is information on a product in full production. 1/12 Contents Contents STU7LN80K5 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK type C package information .....................................................