STU7NB90 Datasheet PDF | STMicroelectronics

STMicroelectronics STU7NB90

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	STU7NB90
Datasheet	STU7NB90 Download
Manufacturer	STMicroelectronics
Description	N-Channel 900V 7.3A MOSFET
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DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. 23 1 Max220 Max220I INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●)Pulse width limited by safe operating area May 2001 Value Unit STU7NB90 STU7NB90I 900 V 900 V ±30 V 7.3 7.3 (*) A 4.6 4.6 (*) A 29.2 29.2 (*) A 170 60 W 1.36 0.47 W/°C 4 V/ns - 2500 V –65 to 150 °C 150 °C...