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STU7NM60N - N-channel Power MOSFET

General Description

This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Key Features

  • Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N.
  • VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 Ω 4.7 A 45 W 20 W 45 W 45 W 1 IPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 3 2 DPAK 1 TO-220FP.

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STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 4.7 A, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Preliminary data Features Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N ■ ■ ■ VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 Ω 4.7 A 45 W 20 W 45 W 45 W 1 IPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 3 2 DPAK 1 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.