STMicroelectronics STU7NM60N
This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.| Part No. | STU7NM60N |
|---|---|
| Datasheet | STU7NM60N Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N●
●
● VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 Ω 4.7 A 45 W 20 W 45 W 45 W 1 IPAK TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 3 1 3 2 DPAK 1 TO-220FP Application
● Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
$ ' 3 !- V Table 1. Device summary Marking Package DPAK TO-220FP 7NM60N TO-220 IPAK Packaging Tape and reel Tube Tube Tube Order codes STD7NM60N STF7NM60N STP7NM60N STU7NM60N October 2009 Doc ID 16472 Rev 1 1/14 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits ..............................................
