STMicroelectronics STU85N3LH5
This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.| Part No. | STU85N3LH5 |
|---|---|
| Datasheet | STU85N3LH5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A● RDS(on) * Qg industry benchmark
● Extremely low on-resistance RDS(on)
● High avalanche ruggedness
● Low gate drive power losses Application Switching applications
DESCRIPTION
3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes STD85N3LH5 STP85N3LH5 STU85N3LH5 Marking 85N3LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube July 2010 Doc ID 13833 Rev 7 1/16 16 Contents Contents STD85N3LH5, STP85N3LH5, STU85N3LH5 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
