STMicroelectronics STU8N65M5
The resulting product has extremely low onFEATURES
Type STB8N65M5 STD8N65M5 STF8N65M5 STI8N65M5 STP8N65M5 STU8N65M5 VDSS @ RDS(on) TJmax max. ID 710 V < 0.6 Ω 7 A PTOT 70 W 70 W 25 W 70 W 70 W 70 W● Worldwide best RDS(on) * area
● Higher VDSS rating
● High dv/dt capability
● Excellent switching performance
● Easy to drive
● 100% avalanche tested
APPLICATIONS
● Switching applications 3 2 1 TO-220FP TAB 3 1 DPAK TAB 3 2 1 TO-220 TAB 123 I²PAK TAB 3 1 D²PAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram $ 4!"DESCRIPTION
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on