STMicroelectronics STU8N80K5
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STU8N80K5 |
|---|---|
| Datasheet | STU8N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 6A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID STU8N80K5 800 V 950 mΩ 6A 3 2 1● Very low FoM (figure of merit)
● Ultra-low gate charge IPAK
● 100% avalanche tested
● Zener-protected D(2, TAB)
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Product status link STU8N80K5 Product summary Order code STU8N80K5 Marking 8N80K5 Package IPAK Packing Tube DS9210 - Rev 6 - October 2025 For further information, contact your local STMicroelectronics sales office. STU8N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 6 A, di/dt ≤ 100 A/μs, VDS (peak) < V(BR)DSS. 3. VDS ≤ 640 V.
