STU8NM50N Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STU8NM50N Key Features
- VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω