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STU8NM50N Datasheet

N-channel Power MOSFET

Manufacturer: STMicroelectronics

STU8NM50N Overview

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STU8NM50N Key Features

  • VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω

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