STMicroelectronics STU90N4F3
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size“ strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.FEATURES
Type STD90N4F3 STI90N4F3 STP90N4F3 STU90N4F3●
● VDSS 40 V 40 V 40 V 40 V RDS(on) max < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ < 6.5 mΩ ID 80 A 80 A 80 A 80 A Pw 1 3 3 2 1 110 W 110 W 110 W 110 W DPAK IPAK Standard threshold drive 100% avalanche tested 1 2 3 3 12 Application
● TO-220 I²PAK Switching applications Figure 1. Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking 90N4F3 90N4F3 90N4F3 90N4F3 Package DPAK I²PAK TO-220 IPAK Packaging Tape & reel Tube Tube Tube Order codes STD90N4F3 STI90N4F3 STP90N4F3 STU90N4F3 July 2008 Rev 2 1/16 16 Contents STD90N4F3 - STI90N4F3 - STP90N4F3 - STU90N4F3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .