STMicroelectronics STU95N2LH5
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit).FEATURES
Type STD95N2LH5 STP95N2LH5 STU95N2LH5●
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● VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 3 1 2 TO-220 Application
● Switching applications Figure 1. Internal schematic diagram $ 4!" OR
DESCRIPTION
' 3 !- V Table 1. Device summary Marking 95N2LH5 95N2LH5 95N2LH5 Package DPAK TO-220 IPAK Packaging Tape and reel Tube Tube Order codes STD95N2LH5 STP95N2LH5 STU95N2LH5 April 2010 Doc ID 13834 Rev 5 1/17 17 Contents STD95N2LH5, STP95N2LH5, STU95N2LH5 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits ..............................................