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STU9HN65M2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STU9HN65M2 N-channel 600 V, 0.71 Ω typ., 5.5 A MDmesh™ M2 Power MOSFET in an IPAK package Datasheet - production data TAB IPAK 3 2 1 Figure 1: Internal schematic diagram D(2, TAB).

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

S(3) AM15572v1_tab Order code STU9HN65M2 Table 1: Device summary Marking Package 9HN65M2 IPAK Packing Tube April 2015 DocID027605 Rev 2 This is information on a product in full production.

Key Features

  • Order code STU9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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