STMicroelectronics STU9HN65M2
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.FEATURES
Order code STU9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A● Extremely low gate charge
● Excellent output capacitance (COSS) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1_tab Order code STU9HN65M2 Table 1: Device summary Marking Package 9HN65M2 IPAK Packing Tube April 2015 DocID027605 Rev 2 This is information on a product in full production. 1/12 Contents Contents STU9HN65M2 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves)...................................................... 6 3 Test circuits .....................................................................................