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STU9N60M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.

Key Features

  • Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected PTOT 60 W Package DPAK TO-220 IPAK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD9N60M2, STP9N60M2, STU9N60M2 Datasheet N-channel 600 V, 0.72 Ω typ., 5.5 A, MDmesh™ M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB DPAK 3 1 TAB TAB TO-220 1 23 IPAK 123 D(2, TAB) G(1) S(3) AM01475V1 Features Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 60 W Package DPAK TO-220 IPAK Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology.