STMicroelectronics STU9NC80ZI
N-CHANNEL 800V - 0.82ohm
| Part No. | STU9NC80ZI |
|---|---|
| Datasheet | STU9NC80ZI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL 800V - 0.82ohm |
| Buy | Stock & Price |
DESCRIPTION
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENTABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU9NC80Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 150...
