STU9NC90ZI Datasheet PDF | STMicroelectronics

STMicroelectronics STU9NC90ZI

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Part No.	STU9NC90ZI
Datasheet	STU9NC90ZI Download
Manufacturer	STMicroelectronics
Description	N-channel Power MOSFET
Buy	Stock & Price

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 150 (1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (*)Limited only by maximum temperature allowed Value STU8NC90ZI 900 900 ±25 7 4.4 28 160 1.28 ±50 4 3 2000 7(*) 4.4(*) 28(*) 55 0.44 Un...