Datasheet4U Logo Datasheet4U.com

STULED602 - N-channel Power MOSFET

Description

These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology.

Table 1.

Features

  • Order codes VDS RDS(on)max. ID PTOT STDLED602 TAB TAB t(s)3 1 ucDPAK IPAK 3 2 1 olete ProdFigure 1. Internal schematic diagram bsD(2,TAB) roduct(s) - OG(1) 600 V STULED602 4.5 Ω 2 A 45 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – STULED602

Datasheet Details

Part number STULED602
Manufacturer STMicroelectronics
File Size 738.94 KB
Description N-channel Power MOSFET
Datasheet download datasheet STULED602 Datasheet
Additional preview pages of the STULED602 datasheet.

📁 Similar Datasheet

  • STU03L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU03L07 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU03N20 - N-Channel MOSFET (SamHop Microelectronics)
  • STU04N20 - N-Channel MOSFET (SamHop Microelectronics)
  • STU06L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU09N25 - N-Channel MOSFET (SamHop Microelectronics)
  • STU100N3LF3 - N-channel Power MOSFET (ST Microelectronics)
  • STU102S - N-Channel MOSFET (SamHop Microelectronics)
  • STU1030PL - P-Channel Enhancement Mode MOSFET (SamHop Microelectronics)
  • STU10L01 - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STDLED602, STULED602 N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages Datasheet − preliminary data Features Order codes VDS RDS(on)max. ID PTOT STDLED602 TAB TAB t(s)3 1 ucDPAK IPAK 3 2 1 olete ProdFigure 1. Internal schematic diagram bsD(2,TAB) roduct(s) - OG(1) 600 V STULED602 4.5 Ω 2 A 45 W • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting application Description These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology. lete P S(3) Obso AM01476v1 Order codes STDLED602 STULED602 Table 1.
Published: |