STV160NF03L Datasheet PDF

STMicroelectronics STV160NF03L

The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID(**) Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor EAS (1) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max.