STMicroelectronics STW10N105K5
The AM01476v1_tab result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.STW10N105K5 Specifications
- Package : TO-247-3
- Mount Type : Through Hole
- RDS(on) Max : 1.3Ω
- Drain-Source Voltage : 1.05kV
- Input Capacitance : 545pF
- Terminals : 3
- Max Power Dissipation : 130W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STW10N105K5 |
|---|---|
| Datasheet | STW10N105K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 1050V 6A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB Order code VDS RDS(on) max. ID 3 2 1 3 STF10N105K5 12 TO-220FP TO-220 STP10N105K5 1050 V 1.3 Ω 6A STW10N105K5 3 2 1 TO-247 D(2, TAB)● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested
APPLICATIONS
● Switching applications G(1)DESCRIPTION
These very high voltage N-channel Power MOSFETs are designed using S(3) MDmesh K5 technology based on an innovative proprietary vertical structure. Product status link STF10N105K5 STP10N105K5 STW10N105K5 DS10606 - Rev 3 - January 2026 For further information, contact your local STMicroelectronics sales office. STF10N105K5, STP10N105K5, STW10N105K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C VISO Insulation withstand voltage (RMS) from all three leads to external hea...
