STMicroelectronics STW10N95K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STW10N95K5 |
|---|---|
| Datasheet | STW10N95K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 950V 8A Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP Order codes VDS RDS(on) max. ID STB10N95K5 STF10N95K5 950 V 800 mΩ 8A STP10N95K5 STW10N95K5 TO-220 1 2 3 TO-247 3 2 1 D(2, TAB)● Very low FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) These very high voltage N-channel Power MOSFETs are designed using MDmesh AM01476v1_tab K5 technology based on an innovative proprietary vertical structure. Product status links STB10N95K5 STF10N95K5 STP10N95K5 STW10N95K5 DS9774 - Rev 4 - October 2025 For further information, contact your local STMicroelectronics sales office. STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(3) Peak diode...
