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STW10NC70Z Datasheet PDF

STMicroelectronics STW10NC70Z

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Part No. STW10NC70Z
Datasheet STW10NC70Z Download
Manufacturer
STMicroelectronics
Description N-CHANNEL Power MOSFET
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STW10NC70Z datasheet page 1 preview

DESCRIPTION

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 700 700 ±25 10.6 6.7 42 190 1.51 ±50 4 3 –65 to 150 150 Unit V V V A A A W W/°C mA KV V/ns °C °C (●)Pulse width limited by safe operating area (1)ISD ≤10.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allow...
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