STMicroelectronics STW10NK80Z
N-CHANNEL Power MOSFET
FEATURES
TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) <0.90Ω <0.90Ω <0.90Ω ID 9A 9A 9A Pw 160 W 40 W 160 W● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitances
● Very good manufacturing repeability 3 2 1 TO-220 3 2 1 TO-220FP TO-247
APPLICATIONS
● Switching applicationDESCRIPTION
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device summary Part number STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube March 2012 This is information on a product in full production.