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STW12N120K5 - N-channel 1200V 12A Power MOSFET

General Description

K5 technology based on an innovative proprietary vertical structure.

Key Features

  • 2 3 1 H2PA K -2 3 12 TO-247 D(TAB) 3 12 TO-220 1 23 TO-247 long leads D(2, TAB) Order codes VDS STH12N120K5-2 STP12N120K5 STW12N120K5 1200 V STWA12N120K5.
  • Very low FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected RDS(on) max. 690 mΩ ID 12 A G(1) G(1).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STH12N120K5-2, STP12N120K5 STW12N120K5, STWA12N120K5 Datasheet N-channel 1200 V, 620 mΩ typ., 12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads packages TAB TAB Features 2 3 1 H2PA K -2 3 12 TO-247 D(TAB) 3 12 TO-220 1 23 TO-247 long leads D(2, TAB) Order codes VDS STH12N120K5-2 STP12N120K5 STW12N120K5 1200 V STWA12N120K5 • Very low FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max. 690 mΩ ID 12 A G(1) G(1) Applications • Switching applications S(2, 3) (H 2PAK-2) S(3) Description ( TO-220, TO-247 and TO-247 long leads) AM15557v3 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure.